Positron annihilation studies of the AlOx/SiO2/Si interface in solar cell structures

نویسندگان

  • C. J. Edwardson
  • P. G. Coleman
  • T.-T. A. Li
  • A. Cuevas
  • S. Ruffell
چکیده

Related Articles Overcoming the bandgap limitation on solar cell materials Appl. Phys. Lett. 100, 083901 (2012) Energy transfer in CaYAlO4: Ce3+, Pr3+ for sensitization of quantum-cutting with the Pr3+-Yb3+ couple J. Appl. Phys. 111, 043104 (2012) GaAs/GaInNAs quantum well and superlattice solar cell Appl. Phys. Lett. 100, 073508 (2012) Understanding the operation of quantum dot intermediate band solar cells J. Appl. Phys. 111, 044502 (2012) Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer J. Appl. Phys. 111, 046101 (2012)

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تاریخ انتشار 2012